Electrostatic chucks
Overview
These electrostatic chucks are designed to chuck the silicon wafer and keep it flat, allowing the wafer to uniformly dissipate the heat received from the plasma. NGK's electrostatic chucks have excellent strength, thermal conductivity and thermal shock resistance and are capable for a wide range of temperature as a result of NGK's proprietary volume resistivity control technology. NGK has aluminum nitride (AlN) and aluminium oxide (Al2O3) materials for this application.
Advantages
Wide operating temperature range (-50~700 deg.C)
These electrostatic chucks have excellent strength, thermal conductivity and thermal shock resistance and are capable for a wide range of temperature by NGK's proprietary volume resistivity control of ceramics.
High corrosion resistance
These electrostatic chucks have superior corrosion resistance against halogen gas.
Low particle treatment
Low particle treatment is available by surface treatment and special cleaning
High purity
Purity of 99.9% or higher is also available.
Heating function
The high-precision heating element embedding technology enables integration with the heater function, and the wafer temperature can be controlled to less than ± 1%.
Cooling function
These electrostatic chucks have extremely high cooling performance by bonding ceramic plate, which has high thermal conductivity, and a cooling plate.
RF electrode
Bulk metal electrodes provide stable wafer chucking and RF plasma generation at the same time.
Specification
| Size | Compatible with 200, 300 and 450mm wafer |
|---|---|
| Chucking mechanism | Johnsen-Rahbek (AlN), Coulomb （Al2O3） |
| Electrode shape | Mono polar / Bi polar |
AlN material properties
| Aluminum Nitride | ||||
|---|---|---|---|---|
| HA-12 | HA-37/38 | HA-50/51 | ||
| Purity | （%） | 95 | 99 | 99 |
| Density | [g/cc] | 3.3 | 3.3 | 3.3 |
| Volume resistivity | [Ωcm](RT) | >1E+15 | 1E+8〜+13 | >1E+15 |
| Heat conductivity | [W/mK](RT) | 170 | 100 | 80 |
| Coefficient of thermal expansion | (RT) | 5.7(1000℃) | 5.6(1000℃) | 5.6(1000℃) |
| Intensity | [MPa](RT) | >300 | >300 | >250 |
| Young's Modulus | [GPa](RT) | 300 | 300 | 300 |
| Dielectric constant | (13.56MHz、RT) | 8.6 | 8.8 | 8.6 |
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