Ceramic heaters
Overview
These heaters are designed to support and heat silicon wafers. They are made of aluminum nitride (AlN), which has outstanding thermal conductivity. They are co-sintered with resistance heating elements to provide excellent thermal uniformity, and reduce metal contamination.
Advantages
Excellent thermal uniformity and wide operating temperature range
These heaters are made of high thermal conductivity material (AlN) and provide excellent thermal uniformity over a wide temperature range (up to 800 deg.C)
Compact
The resistive heating elements and bulk RF electrodes are co-sintered in AlN ceramics, and the ceramic shaft is directly bonded to the heater plate.
High corrosion resistance
These heaters have superior corrosion resistance against halogen gas and oxidizing environments.
Wafer chucking function
RF electrodes are co-sintered in the ceramic plate. These electrodes can be used as electrostatic chuck electrodes for wafer chucking.
E.g., ～600 deg.C<±0.1%
Specification
| Size | Compatible with 200, 300 and 450mm wafer |
|---|---|
| Power supply | 100〜200V×15〜50A |
| Electrode | Ni rods / cables are brazed or screwed to the terminal |
| Material | AlN |
AlN material properties
| Aluminum Nitride | ||||
|---|---|---|---|---|
| HA-12 | HA-37/38 | HA-50/51 | ||
| Purity | [%] | 95 | 99 | 99 |
| Density | [g/cc] | 3.3 | 3.3 | 3.3 |
| Volume resistivity | [Ωcm](RT) | >1E+15 | 1E+8〜+13 | >1E+15 |
| Heat conductivity | [W/mK](RT) | 170 | 100 | 80 |
| Coefficient of thermal expansion | (RT) | 5.7(1000℃) | 5.6(1000℃) | 5.6(1000℃) |
| Intensity | [MPa](RT) | >300 | >300 | >250 |
| Young's Modulus | [GPa](RT) | 300 | 300 | 300 |
| Dielectric constant | (13.56MHz、RT) | 8.6 | 8.8 | 8.6 |
Featured Products
Inquiry about Ceramics for Semiconductor Manufacturing
Please apply with the contact form and give us your comments or questions.