News : 2026

Exhibition at ECOC 2026

TopicsProducts

NGK Europe will exhibit at European Conference on Optical Communications (ECOC) 2026, which will be held in Málaga, Spain, from September 21st 2026 to September 23rd 2026. We will show 8-inch TFLN bonded wafer for the first time in Europe.
Dr. Makoto Iwai gives a presentation at EPIC TechWatch session (Product Focus theatre) on September 23rd.

Conference Overview

Conference NameEuropean Conference on Optical Communications (ECOC) 2026
DatesExhibition : September 21 (Mon) to 23 (Wed), 2026
EPIC TechWatch : September 23 (Wed) 2026, CET10:00-12:30
City / CountryMálaga, Spain
VenueFYCMA 
NGK boothBooth No. 1263
Official WebsiteECOC Exhibition 2026

Exhibited Products

Bonded wafers

Bonded wafers are substrates for electronic devices fabricated by bonding together differing materials. In the NGK production process two types of substrates are directly bonded without using adhesive. This enables the addition of physical properties such as high insulation, high thermal conductivity, low thermal expansion, and high rigidity of the base substrate. Hybrid bonded wafers contribute to creating smaller, faster, and less power-consuming devices for applications such as filters for 5G communications, modulation devices for optical communications, sub-terahertz (sub-THz) antennas, and MEMS (Micro Electro Mechanical Systems) devices. NGK will display TFLN bonded wafer for optical communications and other items at this exhibition.

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Bonded wafer
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Structure of bonded wafer

 

TFLN bonded wafer for optical communications

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A 6-inch TFLN bonded wafer for optical communications

TFLN (Thin Film Lithium Niobate) bonded wafers for optical communications made by proprietary precision-polishing technology. This product offers thin-film LNs free of crystal damage, which contributes to the development of optical modulation devices featuring lower power consumption and smaller dimensions - ideal for data centers and core/metro networks.
At this exhibition, we will exhibit for the first time in Europe our newly developed 8‑inch TFLN bonded wafer. While 4‑inch and 6‑inch are commonly available size for the TFLN wafers, achieving 8‑inch large‑diameter is a cutting‑edge progress. This advancement can expand option for foundries of photonics to utilize their existing production lines to scale their production.

 

InP bonded wafers for high-power lasers

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a 4-inch InP/SiC bonded wafer

InP bonded wafers are manufactured by direct bonding with 4H-SiC (having excellent thermal conductivity) using NGK’s proprietary polishing technique.
Expected to solve the thermal problem of high-power InP based lasers, highly demanded for next generation telecoms and datacoms, such as ELS (External Laser Source) used in CPO (Co-Packaged Optics) for AI servers.

 

Ceramic substrates for photonic devices

As optical communication systems continue to evolve in response to increase in network traffic, the substrates used in optical transceiver modules are required to have advanced electrical, thermal, and high-frequency characteristics, along with high reliability.
NGK Insulators is developing next-generation ceramic substrates to meet such requirements.

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Example of next-generation ceramic substrates
Substrate for CPO optical engine
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Example of next-generation ceramic substrates
Submount substrate for optical modules